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Progress Corrosion Science and Engineering IProgress Corrosion Science and Engineering I

Progress Corrosion Science and Engineering I in Bloomington, MN

By Barnes & Noble

Current price: $169.99
Get it at Barnes and Noble
Progress Corrosion Science and Engineering I

Progress Corrosion Science and Engineering I in Bloomington, MN

Current price: $169.99
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Size: Hardcover

Get it at Barnes and Noble
Topics in Number 46 include:Comprehensive review of the structural aspects and anti-corrosion properties of passive films on metals and alloys; a detailed description is given of the nucleation and growth of 2-dimensional passive films at earlier stages, their effect on the corrosion properties of metal surfaces, and the nanostructures of 3-dimensional passive filmsResearch on nano-and micro-fabrications based on anodizing treatments combined with chemical/mechanical processes such as laser irradiation, atomic force micro-probe processing, and thin film deposition techniquesPassivity of aluminum-based amorphous alloys and stainless steels and the catalytic activity of copper-based amorphous alloysTheoretical analysis of the admittance behavior of passive film/electrolyte junction based on the theory of amorphous semiconductor Schottky barriers
Topics in Number 46 include:Comprehensive review of the structural aspects and anti-corrosion properties of passive films on metals and alloys; a detailed description is given of the nucleation and growth of 2-dimensional passive films at earlier stages, their effect on the corrosion properties of metal surfaces, and the nanostructures of 3-dimensional passive filmsResearch on nano-and micro-fabrications based on anodizing treatments combined with chemical/mechanical processes such as laser irradiation, atomic force micro-probe processing, and thin film deposition techniquesPassivity of aluminum-based amorphous alloys and stainless steels and the catalytic activity of copper-based amorphous alloysTheoretical analysis of the admittance behavior of passive film/electrolyte junction based on the theory of amorphous semiconductor Schottky barriers

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